Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：99.63 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=-40V)

Infineon

英飞凌

Ultra Low On-Resistance

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：201.98 Kbytes 页数：9 Pages

IRF

Spatial Distribution

文件：45.08 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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Ultra-Small, Single-Channel, 8-/10-/12-Bit Buffered Output Voltage DACs with Internal Reference and I2C Interface

General Description The MAX5803/MAX5804/MAX5805 single-channel, low-power, 8-/10-/12-bit, voltage-output this is an addition to content digital-to-analog converters (DACs) include output buffers and an internal reference that is selectable to be 2.048V, 2.500V, or 4.096V. The MAX5803/MAX5804/MAX5

文件：3.29091 Mbytes 页数：31 Pages

MAXIM

美信

Ultra-Small, Single-Channel, 8-/10-/12-Bit Buffered Output Voltage DACs with Internal Reference and I2C Interface

General Description The MAX5803/MAX5804/MAX5805 single-channel, low-power, 8-/10-/12-bit, voltage-output this is an addition to content digital-to-analog converters (DACs) include output buffers and an internal reference that is selectable to be 2.048V, 2.500V, or 4.096V. The MAX5803/MAX5804/MAX5

文件：3.29091 Mbytes 页数：31 Pages

MAXIM

美信