Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：99.87 Kbytes 页数：8 Pages

IRF

33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON)= 0.040Ω, VGS=10V • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：138.17 Kbytes 页数：10 Pages

Fairchild

仙童半导体

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features 1. Ultra Low On-Resistance -rDS(ON)= 0.040Ω,VGS=10V 2. Simulation Models - Temperature Compensated PSPICE™ and SABER©Electrical Models - Spice and SABER©Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve

文件：126.21 Kbytes 页数：10 Pages

Intersil

N-Channel Mosfet Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.044Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operat

文件：237.2 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

VDSS = 100V RDS(on) = 44mΩ ID = 33A Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance througho

文件：734.11 Kbytes 页数：8 Pages

KERSEMI

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

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N-Channel MOSFET Transistor

文件：338.1 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.13 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.0709 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

文件：125.07 Kbytes 页数：10 Pages

IRF