| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF532 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件:180.59 Kbytes 页数:6 Pages | Fairchild 仙童半导体 | Fairchild | |
IRF532 | N-CHANNEL POWER MOSFETS
文件:354.18 Kbytes 页数:6 Pages | Samsung 三星 | Samsung | |
IRF532 | N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 页数:5 Pages | HARRIS | HARRIS | |
IRF532 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
文件:157.16 Kbytes 页数:2 Pages | Motorola 摩托罗拉 | Motorola | |
IRF532 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF532 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件:187.75 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF532 | isc N-Channel Mosfet Transistor 文件:45.27 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF532 | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 | NJS | NJS | |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 页数:5 Pages | HARRIS | HARRIS |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
79000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
100V
- Maximum Continuous Drain Current:
12A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+/25+ |
650 |
原装正品现货库存价优 |
询价 | |||
HARRIS |
17+ |
TO-220 |
6200 |
询价 | |||
MOT |
23+ |
QFP |
5000 |
原装正品,假一罚十 |
询价 | ||
SAMSUNG |
06+ |
原厂原装 |
4684 |
只做全新原装真实现货供应 |
询价 | ||
HARRIS |
新 |
6 |
全新原装 货期两周 |
询价 | |||
HARRIS |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
HAR |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
三星 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
询价 |
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074

