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IRF532

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件:180.59 Kbytes 页数:6 Pages

Fairchild

仙童半导体

IRF532

N-CHANNEL POWER MOSFETS

文件:354.18 Kbytes 页数:6 Pages

Samsung

三星

IRF532

N-Channel Power MOSFETs Avalanche Energy Rated

文件:390.01 Kbytes 页数:5 Pages

HARRIS

IRF532

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

文件:157.16 Kbytes 页数:2 Pages

Motorola

摩托罗拉

IRF532

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

文件:47.74 Kbytes 页数:3 Pages

STMICROELECTRONICS

意法半导体

IRF532

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件:187.75 Kbytes 页数:3 Pages

STMICROELECTRONICS

意法半导体

IRF532

isc N-Channel Mosfet Transistor

文件:45.27 Kbytes 页数:2 Pages

ISC

无锡固电

IRF532

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220

NJS

NJS

IRF532FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

文件:47.74 Kbytes 页数:3 Pages

STMICROELECTRONICS

意法半导体

IRF532R

N-Channel Power MOSFETs Avalanche Energy Rated

文件:390.01 Kbytes 页数:5 Pages

HARRIS

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    79000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    100V

  • Maximum Continuous Drain Current:

    12A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
SAMSUNG
24+/25+
650
原装正品现货库存价优
询价
HARRIS
17+
TO-220
6200
询价
MOT
23+
QFP
5000
原装正品,假一罚十
询价
SAMSUNG
06+
原厂原装
4684
只做全新原装真实现货供应
询价
HARRIS
6
全新原装 货期两周
询价
HARRIS
23+
TO-220
10000
专做原装正品,假一罚百!
询价
HAR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
三星
23+
TO-220
50000
全新原装正品现货,支持订货
询价
IR
21+
TO220
10000
原装现货假一罚十
询价
更多IRF532供应商 更新时间2025-12-1 14:30:00