Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：129.08 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：225.14 Kbytes 页数：11 Pages

IRF

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155 Ω(Typ.)

文件：252.99 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：274.43 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：1.62794 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

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