IRF510

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

IRF510

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF510

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF510

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

IRF510

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRF510

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

Features •5.6A,100V •r DS(ON) =0.540 Ω •SinglePulseAvalancheEnergyRated •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMount Componentsto

IRF510

isc N-Channel Mosfet Transistor

IRF510

Repetitive Avalanche Rated