N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

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Fairchild

仙童半导体

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

文件：70.43 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：1.06464 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：158.35 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：71.57 Kbytes 页数：7 Pages

HARRIS

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

文件：175.7 Kbytes 页数：6 Pages

IRF

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：70.67 Kbytes 页数：2 Pages

SUTEX

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

Features • 5.6A, 100V • r DS(ON) = 0.540 Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to

文件：132.09 Kbytes 页数：6 Pages

SYC

N-Channel Power Mosfets

文件：374.91 Kbytes 页数：5 Pages

ARTSCHIP

isc N-Channel Mosfet Transistor

文件：45.3 Kbytes 页数：2 Pages

ISC

无锡固电