IRF510中文资料HARRIS数据手册PDF规格书
IRF510规格书详情
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号：
IRF510
- 功能描述：
MOSFET N-Chan 100V 5.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
22293 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
TO 220 |
161277 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
06+/96+ |
TO-220 |
608 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY/威世 |
24+ |
TO220 |
3800 |
大批量供应优势库存热卖 |
询价 | ||
HA |
23+ |
TO-220 |
65480 |
询价 | |||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
SEC |
06+ |
TO-220AB |
458 |
询价 | |||
IR |
2025+ |
TO220 |
3685 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
1926+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 |
