Repetitive Avalanche Rated

文件：111.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

Infineon

英飞凌

N-Channel Power MOSFETs, 5.5 A, 60-100V

ONSEMI

安森美半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：158.35 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

文件：151.65 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

文件：252.81 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

文件：252.81 Kbytes 页数：7 Pages

Fairchild

仙童半导体

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

文件：70.43 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：1.06464 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司