Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

文件：252.81 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

文件：70.43 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：1.06464 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It

文件：176.75 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

文件：175.7 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

文件：178.41 Kbytes 页数：6 Pages

IRF

Repetitive Avalanche Rated

文件：111.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HEXFET Power MOSFET

文件：331.86 Kbytes 页数：9 Pages

IRF