IRF510N

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRF510N

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

IRF510N

Advanced Power MOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.)

IRF510N

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF510N

Repetitive Avalanche Rated

IRF510N

HEXFET Power MOSFET