Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：108.57 Kbytes 页数：8 Pages

IRF

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

文件：952.13 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 页数：8 Pages

UMW

友台半导体

MOSFET P 55V 74A 0.02 OHM

文件：695.2 Kbytes 页数：8 Pages

SYC

Advanced Process Technology

文件：720.64 Kbytes 页数：8 Pages

KERSEMI

P-Channel MOSFET Transistor

文件：335.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel Mosfet Transistor

文件：65.75 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：IRF4905；Package：TO-220；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 页数：8 Pages

UMW

友台半导体

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：4.108 Mbytes 页数：10 Pages

KERSEMI