IRF4905P

Marking：IRF4905；Package：TO-220；-55V P-Channel MOSFET

Features *VDS(V)=-55V *ID=-74A(VGS=-10V) *RDS(ON)

IRF4905PBF

HEXFET Power MOSFET

IRF4905PBF

P-Channel 60-V (D-S) MOSFET

IRF4905PBF_15

Advanced Process Technology

IRF4905S

PowerMOSFET(Vdss=-55V,Rds(on)=0.02ohm,Id=-74A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF4905S

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF4905S

AdvancedProcessTechnology

IRF4905S

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-74A@TC=25℃ ·DrainSourceVoltage-VDSS=-550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRF4905S

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-74A@TC=25℃ ·DrainSourceVoltage-VDSS=-550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRF4905SPBF

HEXFETPowerMOSFET

VDSS=-55V RDS(on)=20mΩ ID=-42A Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyo