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IRF4905STRRPBF

Advanced Process Technology

IRFInternational Rectifier

英飞凌英飞凌科技公司

4905

AdjustableRFInductors

BournsBourns Inc.

伯恩斯(邦士)

4905

VHBTape-SpecialtyTapes

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

4905-S

AdjustableRFInductors

BournsBourns Inc.

伯恩斯(邦士)

AUIRF4905

AdvancedPlanarTechnologyLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF4905

AdvancedPlanarTechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF4905L

AdvancedPlanarTechnologyP-ChannelMOSFET

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF4905L

AdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF4905S

AdvancedPlanarTechnologyP-ChannelMOSFET

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF4905S

AdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF4905STRL

AdvancedPlanarTechnologyP-ChannelMOSFET

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF4905STRR

AdvancedPlanarTechnologyP-ChannelMOSFET

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFI4905

AdvancedPlanarTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

CDLL4905

TEMPERATURECOMPENSATEDZENERREFERENCEDIODES

•TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CDLL4905A

TEMPERATURECOMPENSATEDZENERREFERENCEDIODES

•TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CO4905

SURFACEMOUNTCLOCKOSCILLATORS

RALTRONRaltron Electronics Corporation

拉隆

EF4905NMO

AllNMOmountantennaslistedinthiscatalogsectionrequiretheNMOHF-style

pulse

Pulse Electronics

F4905S

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

FKD4905

N-ChandP-ChFastSwitchingMOSFETs

Features ⚫AdvancedTrenchMOSTechnology ⚫SuperLowGateCharge ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫MobileEquipment ⚫DCMotorControl.

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

FKS4905

N-ChandP-ChFastSwitchingMOSFETs

Description TheFKS4905isthehighperformance complementaryN-chandP-chMOSFETswith highcelldensity,whichprovideexcellent RDSONandgatechargeformostofthe synchronousbuckconverterapplications. TheFKS4905meettheRoHSandGreen Productrequirement100EASguaranteed with

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

详细参数

  • 型号:

    IRF4905STRRPBF

  • 功能描述:

    MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
20+
SOT263
2800
全新原装,价格优势
询价
Infineon(英飞凌)
23+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
询价
IR
2016+
TO-263
6528
房间原装进口现货假一赔十
询价
IR
23+
TO-263
8000
原装正品,假一罚十
询价
IR
TO-263
37526
只做原装货值得信赖
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
NA
19+
74552
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
Infineon
23+
NA
10658
专业电子元器件供应链正迈科技特价代理QQ1304306553
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
23+
N/A
59210
正品授权货源可靠
询价
更多IRF4905STRRPBF供应商 更新时间2024-4-28 10:10:00