丝印：IRF4905；Package：TO-220；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF4905；Package：TO-220；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：F4905S；Package：TO-252；-60V P-Channel MOSFET

Features * Advanced Process Technology * Ultra Low On-Resistance * 150°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Some Parameters Are Differrent from IRF4905S * VDS (V) = -60V * ID = -42A (VGS = -10V) RDS(ON)

文件：569.58 Kbytes 页数：7 Pages

UMW

友台半导体

Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：108.57 Kbytes 页数：8 Pages

IRF

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 页数：8 Pages

UMW

友台半导体

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

文件：952.13 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：163.4 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：4.108 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

文件：357.82 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：4.108 Mbytes 页数：10 Pages

KERSEMI