丝印：IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

文件：723.45 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

文件：723.45 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 页数：8 Pages

UMW

友台半导体

丝印：D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

文件：297.21 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；P-Channel 60 V (D-S) MOSFET

文件：1.59267 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

文件：124.32 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：3.15583 Mbytes 页数：8 Pages

KERSEMI