丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 页数：8 Pages

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丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 页数：8 Pages

UMW

友台半导体

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

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Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

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丝印：D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

文件：297.21 Kbytes 页数：2 Pages

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