丝印：F4905S；Package：TO-252；-60V P-Channel MOSFET

Features * Advanced Process Technology * Ultra Low On-Resistance * 150°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Some Parameters Are Differrent from IRF4905S * VDS (V) = -60V * ID = -42A (VGS = -10V) RDS(ON)

文件：569.58 Kbytes 页数：7 Pages

UMW

友台半导体

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

文件：952.13 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

文件：952.13 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

HEXFET짰 Power MOSFET

文件：366.79 Kbytes 页数：12 Pages

IRF