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HM3710K

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IIRF3710

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFP3710

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FullyAvalancheRated •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤25mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFR3710Z

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤18mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRDC3710-DF

USERGUIDEFORIRDC3710-DFEVALUATIONBOARD

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRDC3710-QFN

USERGUIDEFORIRDC3710-QFNEVALUATIONBOARD

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710

PowerMOSFET(Vdss=100V,Rds(on)=23mohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710

N-ChannelPowerMOSFET(100V/59A)

FS

First Silicon Co., Ltd

IRF3710

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3710

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF3710L

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3710L

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710LPBF

HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710PBF

HEXFETPowerMOSFET

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710PBF

57A,100VHeatsinkPlanarN-ChannelPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

IRF3710S

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
IR
24+
TO 247
161286
明嘉莱只做原装正品现货
询价
IR
21+
TO-247
50000
终端可免费提供样品,欢迎咨询
询价
IR
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
询价
IR
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IR
2022
TO-247
80000
原装现货,OEM渠道,欢迎咨询
询价
IR
2022+
TO-247
79999
询价
INFINEON/英飞凌
2023+
TO-247
2000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
IR
08+(pbfree)
TO-247-3
8866
询价
IR
23+
TO-247AC-
7750
全新原装优势
询价
IR
17+
TO-247
6200
100%原装正品现货
询价
更多IRFP3710MOS(场效应管)供应商 更新时间2024-6-18 19:09:00