5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：73.44 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.89003 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9120, SiHFR9120) • Straight lead (IRFU9120, SiHFU9120) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.18471 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120) • Straight Lead

文件：173.05 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -5.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.86 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.04661 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.40688 Mbytes 页数：7 Pages

KERSEMI

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.28393 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.40685 Mbytes 页数：7 Pages

KERSEMI

-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

文件：1.6735 Mbytes 页数：5 Pages

UMW

友台半导体