IRFR9120说明书PDF资料批发采购威世第3页-114ic电子网

首页 >IRFR9120>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR9120PBF	文件：1.89003 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.89003 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR9120PBF	文件：4.28393 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.28393 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9120TR	文件：4.28393 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.28393 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9120TR	文件：1.89003 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.89003 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR9120TRL	文件：1.89003 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.89003 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR9120TRLA	文件：4.40688 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.40688 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9120TRLPBF	文件：1.89003 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.89003 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR9120TRLPBF	文件：4.28393 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.28393 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9120TRLPBFA	文件：4.40688 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.40688 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9120TRPBF	文件：4.28393 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.28393 Mbytes 页数：7 Pages	KERSEMI	KERSEMI

技术参数

OPN：
IRFR9120NTRLPBF/IRFR9120NTRPBF
Qualification：
Non-Automotive
Package name：
DPAK/DPAK
VDS max：
-100 V
RDS (on) @10V max：
480 mΩ/480 mΩ
ID @25°C max：
-6.6 A/-6.6 A
QG typ @10V：
18 nC/18 nC
Polarity：
P
VGS(th) min：
-2 V/-2 V
VGS(th) max：
-4 V/-4 V
VGS(th)：
-3 V/-3 V
Technology：
IR MOSFET™/IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	IRFR9120	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市高捷芯城科技有限公司	IRFR9120	ONSEMI	25+	N/A	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
芯有半导体（深圳）有限公司	IRFR9120	IR	06+	TO-252	15000	原装	询价
深圳市福田区绿盛电子商行	IRFR9120	IR	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市联世界科技有限公司	IRFR9120	IR	24+/25+		3313	原装正品现货库存价优	询价
深圳市一线半导体有限公司	IRFR9120	IR	24+	TO-252	57200	新进库存/原装	询价
深圳市弘为电子有限公司	IRFR9120	IR	24+	原厂封装	145	原装现货假一罚十	询价
齐创科技(上海,北京,青岛)有限公司	IRFR9120	ir	23+	TO-252	5000	原装正品,假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IRFR9120	ir	25+	TO-252	18000	原厂直接发货进口原装	询价
深圳市鼎盛源芯科技有限公司	IRFR9120	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价

更多IRFR9120供应商更新时间2026-1-17 13:00:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号