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IRFR9120TRL

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件:1.89003 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR9120TRLA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件:4.40688 Mbytes 页数:7 Pages

KERSEMI

IRFR9120TRLPBF

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件:4.28393 Mbytes 页数:7 Pages

KERSEMI

IRFR9120TRLPBF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件:1.89003 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR9120TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件:4.40688 Mbytes 页数:7 Pages

KERSEMI

IRFR9120TRLPBFA

Power MOSFET

文件:1.18471 Mbytes 页数:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR9120TRLPBF-BE3

Power MOSFET

文件:1.18471 Mbytes 页数:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFR9120TRL

  • 功能描述:

    MOSFET P-Chan 100V 5.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
4701
只做全新原装真实现货供应
询价
IR
24+
TO-252
36800
询价
IOR
0029+
TO252
5000
原装现货海量库存欢迎咨询
询价
IOR
22+
TO252
5000
全新原装现货!自家库存!
询价
IOR
25+23+
TO252
7617
绝对原装正品全新进口深圳现货
询价
VISHAY
25+
TO-252
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
24+
TO252
9600
原装现货,优势供应,支持实单!
询价
IR
23+
TO252
50000
全新原装正品现货,支持订货
询价
IOR
25+
TO252
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
更多IRFR9120TRL供应商 更新时间2026-2-1 9:16:00