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IRFR9120TR中文资料PDF规格书

IRFR9120TR
厂商型号

IRFR9120TR

功能描述

Power MOSFET

文件大小

1.89003 Mbytes

页面数量

8

生产厂商 Vishay Siliconix
企业简称

Vishay威世科技

中文名称

威世科技半导体官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-21 19:32:00

IRFR9120TR规格书详情

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR9120, SiHFR9120)

• Straight Lead (IRFU9120, SiHFU9120)

• Available in Tape and Reel

• P-Channel

• Fast Switching

• Material categorization: For definitions of compliance

   please see www.vishay.com/doc?99912

产品属性

  • 型号:

    IRFR9120TR

  • 功能描述:

    MOSFET P-Chan 100V 5.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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