Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：184.53 Kbytes 页数：10 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：189.08 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：279.47 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：297.54 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：297.54 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：309.51 Kbytes 页数：10 Pages

IRF

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌