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IRF3710STRLPBF中文资料IRF数据手册PDF规格书
IRF3710STRLPBF规格书详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRF3710STRLPBF
- 功能描述：
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-263 |
15677 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
INFINEON |
23+ |
K-B |
48800 |
只有原装,请来电咨询 |
询价 | ||
IR |
24+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INFINEON |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||||
INFINEON/英飞凌 |
25+ |
TO-263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
2400 |
20年老字号,原装优势长期供货 |
询价 | ||
INFINEON/英飞凌 |
24+ |
D2-PAK |
160075 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
05+ |
TO-263 |
8000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon(英飞凌) |
2024+ |
D2PAK |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
INFINEON |
2049+ |
TO263 |
18000 |
全新原装公司现货
|
询价 |
