Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：297.54 Kbytes 页数：10 Pages

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HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：297.54 Kbytes 页数：10 Pages

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AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：270.17 Kbytes 页数：12 Pages

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Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes 页数：12 Pages

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