| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF3710Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件：270.17 Kbytes 页数：12 Pages | IRF | IRF | |
IRF3710Z | 丝印：EVVO-IRF3710-YYYY；Package：TO-220；N-Channel Enhancement Mode MOSFET Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON) 文件：1.13608 Mbytes 页数：4 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
IRF3710Z | Advanced Process Technology Ultra Low On-Resistance 文件：4.63191 Mbytes 页数：12 Pages | KERSEMI | KERSEMI | |
IRF3710Z | N-Channel MOSFET Transistor 文件：339.41 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
Advanced Process Technology VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved 文件：293.92 Kbytes 页数：9 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件：270.17 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr 文件：323.95 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr 文件：323.95 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件：270.17 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr 文件：323.95 Kbytes 页数：12 Pages | IRF | IRF |
技术参数
- OPN：
IRF3710ZPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
18 mΩ
- ID @25°C max：
59 A
- QG typ @10V：
82 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
TO-220AB |
8866 |
询价 | |||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
25+ |
TO220 |
5 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
全现原装公司现货 |
询价 | ||
IR |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
25+23+ |
TO220 |
54627 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
JINGDAO/晶导微 |
23+ |
SMA(DO-214AC) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 |
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