Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

文件：293.92 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：270.17 Kbytes 页数：12 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes 页数：12 Pages

KERSEMI

Isc N-Channel MOSFET Transistor

文件：301.06 Kbytes 页数：2 Pages

ISC

无锡固电