Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

文件：245.69 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

DESCRITION • reliable device for use in a wide variety of applications FEATURES • Static drain-source on-resistance: RDS(on) ≤6.0mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.3 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220AB 封装的 20V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

文件：245.69 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

文件：291.73 Kbytes 页数：12 Pages

IRF

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

文件：292.69 Kbytes 页数：12 Pages

IRF

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

文件：292.69 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

文件：291.73 Kbytes 页数：12 Pages

IRF

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

文件：245.69 Kbytes 页数：11 Pages

IRF

POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS

DESCRIPTION The IRUK3055CQ01 is a complete power management chipset solution that meets Intel’s VRM 9.0 specifications for CPU power. The chipset consists of the IRU3055CQ 3-phase PWM IC and matching control (IRF3704S) and synchronous MOSFETs (IRF3711S). FEATURES Complete VRM 9.0 chipse

文件：27.59 Kbytes 页数：2 Pages

IRF