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IRF3808PBF

HEXFET Power MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Æ Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tem

文件:213.27 Kbytes 页数:9 Pages

IRF

IRF3808PBF_15

Advanced Process Technology

文件:251.94 Kbytes 页数:9 Pages

IRF

IRF3808S

AUTOMOTIVE MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

文件:162.73 Kbytes 页数:11 Pages

IRF

IRF3808S

Isc N-Channel MOSFET Transistor

文件:189.54 Kbytes 页数:2 Pages

ISC

无锡固电

IRF3808SLPBF

Advanced Process Technology

文件:264.76 Kbytes 页数:12 Pages

IRF

详细参数

  • 型号:

    IRF3808PBF

  • 功能描述:

    MOSFET MOSFT 75V 140A 7mOhm 150nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
25+
TO-220
34740
保证进口原装现货假一赔十
询价
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
询价
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF3808PBF即刻询购立享优惠#长期有货
询价
IR
24+
TO-220
15000
全新原装的现货
询价
IR
16+
TO-220
6152
全新原装/深圳现货库2
询价
IR
23+
TO-220AB
65400
询价
INFINEON
20+
TO-220
50000
询价
IR
2021+
TO-220AB
9450
原装现货。
询价
更多IRF3808PBF供应商 更新时间2026-1-26 17:11:00