13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：56.49 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：214.37 Kbytes 页数：5 Pages

Samsung

三星

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：56.49 Kbytes 页数：7 Pages

Intersil

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

文件：144.63 Kbytes 页数：7 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • 13A,500V • RDS(on)=0.4Ω • SOA is Power Dissipation Limited • Linear Transfer Characteristics • Related Literature APPLICATIONS • Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipola

文件：48.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：136.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching sp

文件：434.5 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

N-CHANNEL POWER MOSFET

文件：196.98 Kbytes 页数：3 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：19.01 Kbytes 页数：2 Pages

SEME-LAB

HiRel MOSFETs

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Infineon

英飞凌