HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

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IRF

Advanced Process Technology

文件：366.79 Kbytes 页数：12 Pages

IRF

17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Stereo Systems

Overview The LA4905 is a BTL 2-channel power amplifier IC for use in car audio systems. Increases in the number of external components are held to a minimum by adopting both a signal-following type switching scheme in the amplifier’s output stage power supply, and a newly-developed nonlinear ampl

文件：549.18 Kbytes 页数：10 Pages

SANYO

三洋

GaAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features ● High-power output, high-efficiency: PO = 15 mW (min.) ● Fast response and high-speed modulation capability: fC = 30 MHz (typ.) ● Transparent epoxy resin package

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PANASONIC

松下

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications

Features • Temperature compensated magnetic performance • Digital output signal • For unipolar and alternating magnetic fields • Large temperature range • Protection against reversed polarity • Output protection against electrical disturbances

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SIEMENS

西门子