N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

文件：211.25 Kbytes 页数：5 Pages

SAMSUNG

三星

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are

文件：55.88 Kbytes 页数：7 Pages

INTERSIL

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

文件：142.75 Kbytes 页数：7 Pages

IRF

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

文件：150.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

文件：137.56 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

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ARTSCHIP

isc N-Channel MOSFET Transistor

文件：49.06 Kbytes 页数：2 Pages

ISC

无锡固电

Repetitive Avalanche Ratings

文件：146.27 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re

ONSEMI

安森美半导体