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IRF3805

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:361.25 Kbytes 页数:12 Pages

IRF

IRF3805

N-Channel MOSFET Transistor

文件:339.23 Kbytes 页数:2 Pages

ISC

无锡固电

IRF3805

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

IRF3805L

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:361.25 Kbytes 页数:12 Pages

IRF

IRF3805L-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件:303.03 Kbytes 页数:12 Pages

IRF

IRF3805LPBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:417.59 Kbytes 页数:12 Pages

IRF

IRF3805PBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:417.59 Kbytes 页数:12 Pages

IRF

IRF3805S

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:361.25 Kbytes 页数:12 Pages

IRF

IRF3805S-7P

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件:638.02 Kbytes 页数:10 Pages

IRF

IRF3805S-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件:303.03 Kbytes 页数:12 Pages

IRF

技术参数

  • OPN:

    IRF3805PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    55 V

  • RDS (on) @10V max:

    3.3 mΩ

  • ID @25°C max:

    210 A

  • QG typ @10V:

    190 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
16+
TO-220
10000
全新原装现货
询价
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
23+
TO-220
5000
专做原装正品,假一罚百!
询价
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON
25+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-220
3000
原装正品假一罚百!可开增票!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多IRF3805供应商 更新时间2025-10-5 11:03:00