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IRF3711S

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConv

IRF

International Rectifier

IRF3711S

POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS

DESCRIPTION TheIRUK3055CQ01isacompletepowermanagementchipsetsolutionthatmeetsIntel’sVRM9.0specificationsforCPUpower.ThechipsetconsistsoftheIRU3055CQ3-phasePWMICandmatchingcontrol(IRF3704S)andsynchronousMOSFETs(IRF3711S). FEATURES CompleteVRM9.0chipse

IRF

International Rectifier

IRF3711SPBF

HEXFET Power MOSFET

SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConverte

IRF

International Rectifier

IRF3711SPBF

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConverte

IRF

International Rectifier

IRF3711STRLPBF

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConverte

IRF

International Rectifier

IRF3711STRL

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

IRF

International Rectifier

IRF3711Z

HEXFETPowerMOSFET

Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower Benefits •LowRDS(on)at4.5VVGS •Ultra-LowGateImpedance •FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRF3711ZCL

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

Benefits ●LowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencySynchronousBuck ConvertersforComputerProcessorPower

IRF

International Rectifier

IRF3711ZCL

HEXFETPowerMOSFET

Benefits ●LowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencySynchronousBuck ConvertersforComputerProcessorPower

IRF

International Rectifier

IRF3711ZCLPBF

HEXFETPowerMOSFET

Benefits ●LowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencySynchronousBuck ConvertersforComputerProcessorPower ●Lead-Free

IRF

International Rectifier

详细参数

  • 型号:

    IRF3711S

  • 功能描述:

    MOSFET N-CH 20V 110A D2PAK

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
17+
TO-220
31518
原装正品 可含税交易
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
03+
原厂原装
10000
自己公司全新库存绝对有货
询价
IR
17+
TO-263
6200
询价
IR
23+
TO263
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
IR
2016+
TO263
3000
公司只做原装,假一罚十,可开17%增值税发票!
询价
IR
23+
TO-263
35890
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IOR
24+
TO-263
2987
绝对全新原装现货供应!
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多IRF3711S供应商 更新时间2025-5-25 10:01:00