MOSFET N-CH 20V 92A D2PAK

Infineon

英飞凌

Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A??

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Server Processor P

文件：239.52 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Frequency Buck Converters For Server Processor Power Synchronous FET • FEATURES • Static drain-source on-resistance: RDS(on)≤6.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件：236.81 Kbytes 页数：11 Pages

IRF