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IRF430

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

文件:141.08 Kbytes 页数:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF430

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

文件:211.24 Kbytes 页数:5 Pages

Samsung

三星

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

文件:56.66 Kbytes 页数:7 Pages

Intersil

IRF430

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

文件:146.28 Kbytes 页数:7 Pages

IRF

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

文件:153.46 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF430

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

文件:122.44 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF430

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

文件:122.44 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF430

N-CHANNEL POWER MOSFET

文件:21.34 Kbytes 页数:2 Pages

SEME-LAB

Seme LAB

IRF430

isc N-Channel MOSFET Transistor

文件:48.56 Kbytes 页数:2 Pages

ISC

无锡固电

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    500V

  • Maximum Continuous Drain Current:

    4.5A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-204AA(TO-3)
7793
支持大陆交货,美金交易。原装现货库存。
询价
IR
24+
TO-3
10000
询价
GE
24+/25+
20
原装正品现货库存价优
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
MOTOROLA
05+
原厂原装
4219
只做全新原装真实现货供应
询价
1
全新原装 货期两周
询价
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
har
24+
500000
行业低价,代理渠道
询价
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
NO
23+
56143
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
更多IRF430供应商 更新时间2025-10-4 16:12:00