HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

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HEXFET® Power MOSFET

Infineon

英飞凌

Advanced Process Technology

文件：748.76 Kbytes 页数：12 Pages

INFINEON

英飞凌

Ultra Low On-Resistance

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HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

文件：311.87 Kbytes 页数：14 Pages

IRF