AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：361.25 Kbytes 页数：12 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：300.09 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件：638.02 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件：303.03 Kbytes 页数：12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：417.59 Kbytes 页数：12 Pages

IRF

Advanced Process Technology

文件：346.28 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：394.62 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Process Technology

文件：394.62 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

55V 单 N 通道 HEXFET 功率 MOSFET，采用 7 引脚 D2-Pak 封装

\n优势:\n• RoHS Compliant\n• Industry-leading quality\n• Fast Switching\n• 175°C Operating Temperature;

Infineon

英飞凌