AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

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IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件：303.03 Kbytes 页数：12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：417.59 Kbytes 页数：12 Pages

IRF

Advanced Process Technology

文件：394.62 Kbytes 页数：12 Pages

VishayVishay Siliconix

威世科技

HEXFET® Power MOSFET

VDSS = 55V\nRDS(on) = 3.3mΩ\nID = 75ADescription\nSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperat Advanced Process Technology\nUltra Low On-Resistance\n175°C Operating Temperature\nFast Switching\nRepetitive Avalanche Allowed up to Tjmax\nLead-Free;

Infineon

英飞凌

HEXFET® Power MOSFET

Infineon

英飞凌