N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：136.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：214.37 Kbytes 页数：5 Pages

Samsung

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N-CHANNEL POWER MOSFETS

文件：212.66 Kbytes 页数：5 Pages

Samsung

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isc N-Channel MOSFET Transistor

文件：67.79 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

文件：170.22 Kbytes 页数：2 Pages

ISC

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