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IRF3710PBF中文资料PDF规格书
IRF3710PBF规格书详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRF3710PBF
- 功能描述：
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-220 |
6880 |
只做原装,质量保证 |
询价 | ||
INFINEON |
23+ |
TO220AB |
6000 |
全新原装现货、诚信经营! |
询价 | ||
IR |
2024+实力库存 |
TO-220 |
35 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
23+ |
T0-220 |
1600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
X-MOS |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
IR |
2023+ |
T0-220 |
150000 |
全新原装正品,优势价格 |
询价 | ||
TE/泰科 |
2308+ |
135711 |
一级代理,原装正品,公司现货! |
询价 | |||
INFINEON/英飞凌 |
22+ |
TO-220 |
9500 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
VISHAY |
20+ |
原装正品 |
65300 |
一级代理/放心采购 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
14050 |
20年老字号,原装优势长期供货 |
询价 |
