IRF3710中文资料IRF数据手册PDF规格书

VDSS = 100V

RDS(on) = 23mΩ

ID = 57A

描述 Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated