P-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

文件：306.39 Kbytes 页数：5 Pages

SAMSUNG

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：2.01341 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface mount (IRFR9014, SiHFR9014) • Straight lead (IRFU9014, SiHFU9014) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.16375 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014) • Straight L

文件：188.89 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014) • Straight L

文件：177.68 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -5.1A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：310.51 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.53358 Mbytes 页数：7 Pages

KERSEMI

isc P-Channel MOSFET Transistor

文件：345.48 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.53358 Mbytes 页数：7 Pages

KERSEMI