N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.94 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.74603 Mbytes 页数：10 Pages

KERSEMI

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

文件：490.14 Kbytes 页数：7 Pages

UMW

友台半导体

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes 页数：10 Pages

IRF

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.84791 Mbytes 页数：10 Pages

KERSEMI

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.84606 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：240.03 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：244.71 Kbytes 页数：11 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：244.71 Kbytes 页数：11 Pages

IRF