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IRFR9014

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR9014,SiHFR9014) •Straightlead(IRFU9014,SiHFU9014) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

IRFR9014

Marking:FR9014;Package:TO252;P-Channel Enhancement Mode MOSFETl

Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

IRFR9014

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-5.1A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

IRF

International Rectifier

IRFR9014

HEXFET Power MOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

IRF

International Rectifier

IRFR9014

P-CHANNEL POWER MOSFETS

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半导体

IRFR9014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFR9014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9014

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR9014_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR9014,SiHFR9014) •Straightlead(IRFU9014,SiHFU9014) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFR9014

  • 功能描述:

    MOSFET P-Chan 60V 5.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
24+
TO-252
501747
免费送样原盒原包现货一手渠道联系
询价
IR
24+
N/A
8000
全新原装正品,现货销售
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-252
1523
询价
IR
05+
TO-252
15000
原装进口
询价
IR
23+
TO-252
18689
询价
IR
24+
(TO-252)
1180
原装现货假一罚十
询价
IR
23+
D-Pak
8600
全新原装现货
询价
IR
23+
TO-252
20000
原装正品,假一罚十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IRFR9014供应商 更新时间2025-7-23 17:06:00