HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：152.65 Kbytes 页数：10 Pages

IRF

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：247.26 Kbytes 页数：2 Pages

ISC

无锡固电

Surface Mount (IRFR120N)

文件：3.73792 Mbytes 页数：10 Pages

KERSEMI

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：4.0085 Mbytes 页数：10 Pages

KERSEMI

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：395.05 Kbytes 页数：11 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件：1.08076 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

采用 I-Pak 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌