Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：4.0085 Mbytes 页数：10 Pages

KERSEMI

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：395.05 Kbytes 页数：11 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件：1.08076 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.27廓 , ID = 7.7A )

文件：2.12101 Mbytes 页数：10 Pages

IRF

IRFR120

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.70201 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.22483 Mbytes 页数：7 Pages

KERSEMI