IRFL9N60ATRPBF说明书PDF资料供应代理第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFS9N60A	文件：105.19 Kbytes Page：9 Pages	SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS9N60A	文件：223.37 Kbytes Page：10 Pages	PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60APBF	文件：223.37 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60APBF	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60APBF	文件：232.72 Kbytes Page：9 Pages	SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS9N60ATRL	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60ATRLPBF	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60ATRLPBFA	文件：223.37 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60ATRR	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60ATRRPBF	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFS9N60ATRRPBFA	文件：223.37 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFSL9N60A	文件：234.94 Kbytes Page：10 Pages	PowerMOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamic dV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSDirective200	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFSL9N60A	文件：261.85 Kbytes Page：11 Pages	PowerMOSFETs FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdv/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFSL9N60A	文件：131.31 Kbytes Page：8 Pages	SMPSMOSFET	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFSL9N60APBF	文件：261.85 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MDF9N60	文件：739.29 Kbytes Page：6 Pages	N-ChannelMOSFET600V,9A,0.75(ohm) TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF9N60B	文件：787.12 Kbytes Page：6 Pages	N-ChannelMOSFET600V,9A,0.80(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF9N60BTH	文件：787.12 Kbytes Page：6 Pages	N-ChannelMOSFET600V,9A,0.80(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF9N60BTH	文件：323.12 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDF9N60TH	文件：323.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鼎欣微电子有限公司	IRFL9N60ATRPBF	IR	23+		12000		询价
深圳市惊羽科技有限公司	IRFL9N60ATRPBF	INFINEON-英飞凌	24+25+/26+27+	SOT-223	57500	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市河锋鑫科技有限公司	IRFLBA3803P	IR	22+	TO-22	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFLBA3803P	IR	23+	TO-22	8000	只做原装现货	询价
贸泽芯城（深圳）电子科技有限公司	IRFLD110	IR	21+ROHS	DIP-4L	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
上海鑫科润电子科技有限公司	IRFLELANDPBF	IOR	2007	DIRECTFET	1813	原装现货海量库存欢迎咨询	询价
深圳廊盛科技有限公司	IRFLELANDPBF	IR	22+	DIRECTFET	50000	只做原装正品,假一罚十,欢迎咨询	询价
深圳市赛美科科技有限公司	IRFLELANDPBF	IR		ROHS	13352	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市鹏和科技有限公司	IRFLL014	N/A	24+	NA	5000	只做原装公司现货	询价
深圳市昌和盛利电子有限公司	IRFLM220A	IR	23+	SOT223	35890		询价

更多IRFL9N60ATRPBF供应商更新时间2024-6-18 10:58:00

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