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零件编号	下载&订购	功能描述	制造商&上传企业
IRFR214	文件：52.94 Kbytes Page：6 Pages	2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
IRFR214	文件：169.07 Kbytes Page：6 Pages	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) HEXFET®PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFR214	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.
IRFR214	文件：873.05 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR214,SiHFR214) •Straightlead(IRFU214,SiHFU214) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技
IRFR214	文件：853.62 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFR214	文件：331.94 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRFR214_V01	文件：873.05 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR214,SiHFR214) •Straightlead(IRFU214,SiHFU214) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技
IRFR214B	文件：647.48 Kbytes Page：9 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
IRFR214PBF	文件：2.14295 Mbytes Page：10 Pages	HEXFET짰 Power MOSFET HEXFET®PowerMOSFET •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR214) •StraightLead(IRFU214) •AvailableinTape&Reel •FastSwitching •EaseofParalleling •Lead-Free	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFR214PBF	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214PBF	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.
IRFR214TR	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214TRA	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.
IRFR214TRLPBF	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214TRLPBFA	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.
IRFR214TRPBF	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214TRPbFA	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.
IRFR214TRR	文件：1.74298 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技
IRFR214TRRA	文件：4.26318 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.

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详细参数

型号：
IRFR214
功能描述：
MOSFET N-Chan 250V 2.2 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IRFR214	IR/VISHAY	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市深创辉科技有限公司	IRFR214	IR	9925		278	原装正品现货供应	询价
深圳市昌和盛利电子有限公司	IRFR214	IR	23+	D-PAK	9562		询价
深圳市星佑电子有限公司	IRFR214	IR	05+	TO-252	15000	原装进口	询价
深圳市特顺芯科技有限公司	IRFR214	IR	03+	SOT-252	1000		询价
深圳市莱克讯科技有限公司	IRFR214	仙童/IR	2017+	TO-252	44558	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市科恒伟业电子有限公司	IRFR214	INTERSIL	2016+		5632	只做进口原装正品!现货或者订货一周货期!只要要网上有	询价
深圳市博浩通科技有限公司	IRFR214	IR	23+	D-Pak	8600	全新原装现货	询价
深圳市勤思达科技有限公司	IRFR214	IR	2015+	D-Pak	12500	全新原装,现货库存长期供应	询价
深圳市永贝尔科技有限公司	IRFR214	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价

更多IRFR214供应商更新时间2024-4-27 15:30:00

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