2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

文件：52.94 Kbytes 页数：6 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：1.74298 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：873.05 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A

文件：169.07 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：4.26318 Mbytes 页数：7 Pages

KERSEMI

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：331.94 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：853.62 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR214, SiHFR214);

Vishay

威世

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

Infineon

英飞凌

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

Renesas

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