IRFS9N60A资料datasheet下载批发采购威世-114ic电子网

首页 >IRFS9N60A>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFS9N60A	文件：165.8 Kbytes Page：8 Pages	Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib 文件：165.8 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60A	文件：223.37 Kbytes Page：10 Pages	Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note 文件：223.37 Kbytes 页数：10 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60A	文件：105.19 Kbytes Page：9 Pages	SMPS MOSFET Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High Speed Power Sw 文件：105.19 Kbytes 页数：9 Pages	IRF	IRF
IRFS9N60A	文件：322.87 Kbytes Page：2 Pages	丝印：D2PAK；Package：TO-263；iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：322.87 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFS9N60A_V01	文件：223.37 Kbytes Page：10 Pages	Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note 文件：223.37 Kbytes 页数：10 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60APBF	文件：232.72 Kbytes Page：9 Pages	SMPS MOSFET Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High Speed Power Sw 文件：232.72 Kbytes 页数：9 Pages	IRF	IRF
IRFS9N60APBF	文件：165.8 Kbytes Page：8 Pages	Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib 文件：165.8 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60ATRL	文件：165.8 Kbytes Page：8 Pages	Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib 文件：165.8 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60ATRLPBF	文件：165.8 Kbytes Page：8 Pages	Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib 文件：165.8 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFS9N60ATRR	文件：165.8 Kbytes Page：8 Pages	Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib 文件：165.8 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay

详细参数

型号：
IRFS9N60A
功能描述：
MOSFET N-Chan 600V 9.2 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	IRFS9N60A	INTERNATIONA	05+	原厂原装	4221	只做全新原装真实现货供应	询价
深圳市福田区绿盛电子商行	IRFS9N60A	IR	2015+	D2-Pak	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	IRFS9N60A	IR	24+	D2-Pak	8866		询价
深圳市欧立现代科技有限公司	IRFS9N60A	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市华来深电子有限公司	IRFS9N60A	IR	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳诚思涵科技有限公司	IRFS9N60A	IR	18+	TO-263	85600	保证进口原装可开17%增值税发票	询价
中天科工半导体（深圳）有限公司	IRFS9N60A	IR/VISHAY	20+	TO-220F	36900	原装优势主营型号-可开原型号增税票	询价
艾睿（深圳）半导体有限公司	IRFS9N60A	VISHAY/威世	2447	TO-263	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IRFS9N60A	VISHAY	25+	TO-263	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市莱克讯科技有限公司	IRFS9N60A	原装	1923+	NA	9200	公司原装现货假一罚十特价欢迎来电咨询	询价

更多IRFS9N60A供应商更新时间2025-12-8 16:14:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号