MDF9N60B

N-Channel MOSFET 600V, 9A, 0.80(ohm)

MDF9N60BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF9N60BTH

N-Channel MOSFET 600V, 9A, 0.80(ohm)

MDF9N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF9N60TH

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MDP9N60

N-ChannelMOSFET600V,9A,0.75(ohm)

MDP9N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP9N60TH

N-ChannelMOSFET600V,9A,0.75(ohm)

MTN9N60BFP

N-ChannelEnhancementModePowerMOSFET

PHB9N60E

PowerMOStransistorsAvalancheenergyrated