MDF9N60TH规格书应用电路市场行情无锡固电-114ic电子网

首页 >MDF9N60TH>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MDF9N60TH	文件：739.29 Kbytes Page：6 Pages	N-Channel MOSFET 600V, 9A, 0.75(ohm) TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF9N60TH	文件：323.26 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
9N60	文件：63.55 Kbytes Page：2 Pages	iscN-ChannelMosfetTransistor DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BLV9N60	文件：374.44 Kbytes Page：6 Pages	N-channelEnhancementModePowerMOSFET	ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd	ESTEK
FB9N60A	文件：135.44 Kbytes Page：8 Pages	PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
FCD9N60N	文件：784.87 Kbytes Page：8 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCD9N60NTM	文件：353.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCD9N60NTM	文件：784.87 Kbytes Page：8 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP9N60N	文件：336.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCP9N60N	文件：911.95 Kbytes Page：10 Pages	N-ChannelMOSFET600V,9A,0.385廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF9N60NT	文件：911.95 Kbytes Page：10 Pages	N-ChannelMOSFET600V,9A,0.385廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF9N60NT	文件：323.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF9N60NT	文件：651.06 Kbytes Page：10 Pages	N-ChannelSupreMOS짰MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFB9N60	文件：135.44 Kbytes Page：8 Pages	PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB9N60A	文件：135.44 Kbytes Page：8 Pages	PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB9N60A	文件：302.95 Kbytes Page：9 Pages	Switchmodepowersupply	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFB9N60A	文件：331.87 Kbytes Page：21 Pages	IRPLLNR5WideRangeInputLinearFluorescentBallast	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB9N60A	文件：329.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFB9N60A	文件：303.68 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFB9N60APBF	文件：160.96 Kbytes Page：9 Pages	HEXFETPowerMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowersw	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

12 3 4 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市中联芯电子有限公司	MDF9N60TH	MAGNACHIP	24+	TO-220F	10000	只做原装欢迎含税交易,假一赔十,放心购买	询价
深圳市赛尔通科技有限公司	MDF9N60TH	MAGNACHIP	23+	TO-220F	65400		询价
深圳市赛能新源半导体有限公司	MDF9N60TH	MAGNACHIP/美格纳	21+	TO-220F	60000	原装正品进口现货	询价
深圳市勤思达科技有限公司	MDF9N60TH	MAGNACHIP/美格纳	2021+	TO-220F	12000	勤思达只做原装现货库存	询价
深圳市科恒伟业电子有限公司	MDF9N60TH	MAGNACHIP/美格纳	22+	TO-220F	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳市向鸿伟业电子有限公司	MDF9N60TH	MAGNACHIP/美格纳	2410+	TO-220	55000	原装正品.假一赔百.正规渠道.原厂追溯.	询价
深圳市深创辉科技有限公司	MDF9N60TH	美格纳	11+	TO-220F	10000	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市恒创达实业有限公司	MDF9N60TH	MAGNACHIP	17+	TO-220F	6200	100%原装正品现货	询价
深圳市海天鸿电子科技有限公司	MDF9N60TH	MAGNACHIP	1716+	TO-220F	8500	只做原装进口,假一罚十	询价
上海专毅电子科技有限公司	MDF9N60TH	Magnachip	17+	TO-220F	9888	只做原装,现货库存	询价

更多MDF9N60TH供应商更新时间2024-6-15 9:12:00

相关规格书

相关库存