isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.26 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 9A, 0.75(ohm)

The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：739.29 Kbytes 页数：6 Pages

MGCHIP

600V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 600V, 9A, 0.75(ohm)

文件：991.31 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 600V, 9A, 0.75(ohm)

文件：991.31 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.59 Kbytes 页数：2 Pages

ISC

无锡固电